DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Professional LED maker from China Over 10 years of LED production experiences Sufficent supply,entirely quality assured
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Test Condition 1000mA high brightness light emitting diodes Radiant Intensity 450mW/Sr
High Power Infrared Emitting Diode
Free air transmission system. Optoelectronic switch. Floppy disk drive. Infrared applied system. Smoke detector.
Applications:
The DL-HP20SIR Infrared Emitting Diode is a high intensity diode. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Descriptions: High reliability. High radiant intensity. Low forward voltage. Peak wavelength λp=850nm. The product itself will remain within RoHS compliant version.
1W 3 Watt 5Watt 730nm 810nm 850nm 880nm 900nm 980nm 940nm High Power IR LED
CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting
| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 2000 | mW |
| Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) | IFP | 1.50 | A |
| Forward Current | IF | 1000 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -10℃ to +70℃ | |
| Storage Temperature Range | Tstg | -20℃ to +80℃ | |
| Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity | Ie | 360 | 450 | --- | mW/Sr | IF=1000mA |
| Viewing Angle * | 2θ1/2 | --- | 120 | --- | Deg | (Note 1) |
| Peak Emission Wavelength | λp | --- | 850 | --- | nm | IF=1000mA |
| Spectral Bandwidth | △λ | --- | 40 | --- | nm | IF=1000mA |
| Forward Voltage | VF | 1.30 | 1.70 | 2.00 | V | IF=1000mA |
| Reverse Current | IR | --- | --- | 50 | µA | VR=5V |
Notes:
1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
