DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
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GaAs Chip Material 120 Degree 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
SMD Infrared Emitting Diode
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity * | Ee | 0.20 | 0.35 | --- | mW/sr | IF=20mA |
| --- | 2.50 | --- | IF=100mA (Pulse Width≤100µs, Duty≤1%) | |||
| Viewing Angle * | 2θ 1/2 | --- | 140 | --- | Deg | IF=20mA (Note 2) |
| Peak Emission Wavelength | λp | --- | 940 | --- | nm | IF=20mA (Note 3) |
| Spectral Bandwidth | △λ | --- | 50 | --- | nm | IF=20mA |
| Forward Voltage | VF | 0.80 | 1.20 | 1.50 | V | IF=20mA |
| --- | 1.60 | 1.80 | IF=100mA (Pulse Width≤100µs, Duty≤1%) | |||
| Reverse Current | IR | --- | --- | 10 | µA | VR=5V |
Notes:
Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 100 | mW |
| Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) | IFP | 1.00 | A |
| Forward Current | IF | 50 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -40℃ to +80℃ | |
| Storage Temperature Range | Tstg | -40℃ to +100℃ | |
| Lead Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
