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940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

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DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
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Province/State:guangdong
Country/Region:china
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940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

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Brand Name :Double Light
Model Number :DL-PT9087C
Certification :ISO9001:2008,Rosh
Place of Origin :China
MOQ :1000 PCS
Price :US$ 0.01-0.1per unit (Pieces)
Payment Terms :L/C, T/T, Western Union, Paypal
Supply Ability :15,000,000pcs per Day
Delivery Time :5-7 working days after received your payment
Product Name :Infrared Emitting Diode
Power (mW) :75
Source Color :Phototransistor
Lens Color :Water Clear
Peak Emission Wavelength :940nm
Forward Voltage @20ma :5V
Reception Angle :30 Deg
Storage Temperature :-40 ~ +85
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View Product Description

LED 940nm Phototransistor High photo sensitivity Water Clear Emitter Emission

Features:

  • Fast response time l
  • High photo sensitivity l
  • Small junction capacitance
  • Pb free l
  • The product itself will remain with in RoHS compliant version.

Descriptions:

  • The PTC730C-B is a photo transistor in miniature package which is molded in a water clear plastic with spherical top view lens.The device is spectrally to infrared emitting diode.

Applications:

  • Automatic door sensor.
  • Infrared applied system.
  • Counters and sorters.
  • Encoders.
  • Optoelectronic switch.
  • Video camera, tape and card readers.
  • Position sensors.
  • Copier.
  • Game machine.
  • Optical counters
  • Optical detectors
  • Flywheel counters

Rankings

Parameter Symbol Min Max Unit Test condition
7-3 Ic(on) 0.53 1.19 mA

VCE=5V

Ee=0.555mW/cm2

7-2 0.88 1.70
7-1 1.24 2.21
6-2 1.59 2.98
6-1 1.77 3.41

Package Dimension

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

Part No. Chip Material Lens Color Source Color
DL-PT9087C Silicon Water Clear Phototransistor

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ± 0.25mm (0.01″) unless otherwise specified.

3. Specifications are subject to change without notice.

Absolute Maximum Ratings (Ta=25℃)

Parameter Symbol Ratings Unit
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO 5 V
Collector Power Dissipation PD 75 mW
Collector Current IC 40 mA
Operating Temperature Topr -25 ~ +65 °C
Storage Temperature Tstg -40 ~ +85 °C
Soldering Temperature *2 Tsol 260 °C

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2

Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V

On-State Collector Current IC(ON) 0.53 ---- 3.41 mA

VCE=5V

Ee=0.555mW/cm2

Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 1/2 --- 30 --- Deg
Wavelength Of Peak Sensitivity λP --- 940 --- nm
Rang Of Spectral Bandwidth λ0.5 400 --- 1200 nm

*2. At the position of 2mm from the bottom face of resin package within 5 second.

Typical Electrical / Optical Characteristics Curves

(25℃ Ambient Temperature Unless Otherwise Noted)

940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

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